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FMUSER Original New D1029UK RF Power Transistor Power MOSFET Transistor Dual N-Channel MOSFET, 35 A, 70 V, 5-Pin DR D1029UK
FMUSER Original New D1029UK RF Power Transistor Power MOSFET Transistor Dual N-Channel MOSFET, 35 A, 70 V, 5-Pin DR D1029UK Features SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN-13 db MINIMUM Specifications Attribute/Value Channel Type:N Maximum Continuous Drain Current:35 A Maximum Drain Source Voltage:70 V Package Type:DR Mounting Type:Panel Mount Pin Count:5 Channel Mode:Enhancement Maximum Gate Threshold Voltage:7V Maximum Power Dissipation:438 W Transistor Configuration:Common Source Maximum Gate Source Voltage:-20 V, +20 V Number of Elements per Chip:2 Maximum Operating Temperature:+200 °C Transi
Detail
| Price(USD) | Qty(PCS) | Shipping(USD) | Total(USD) | Shipping Method | Payment |
| 149 | 1 | 0 | 149 | DHL |
FMUSER Original New D1029UK RF Power Transistor Power MOSFET Transistor Dual N-Channel MOSFET, 35 A, 70 V, 5-Pin DR D1029UK
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW Crss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN-13 db MINIMUM
Specifications
Attribute/Value
Channel Type:N
Maximum Continuous Drain Current:35 A
Maximum Drain Source Voltage:70 V
Package Type:DR
Mounting Type:Panel Mount
Pin Count:5
Channel Mode:Enhancement
Maximum Gate Threshold Voltage:7V
Maximum Power Dissipation:438 W
Transistor Configuration:Common Source
Maximum Gate Source Voltage:-20 V, +20 V
Number of Elements per Chip:2
Maximum Operating Temperature:+200 °C
Transistor Material:Si
Height:5.08mm
Width:10.16mm
Series:TetraFET
Length:34.03mm
Package include:
1x MRF1K50H RF Power Transistor
| Price(USD) | Qty(PCS) | Shipping(USD) | Total(USD) | Shipping Method | Payment |
| 149 | 1 | 0 | 149 | DHL |
