​​Ultra-small gate driver solves false triggering

Infineon has developed a gate driver IC that prevents false triggering caused by parasitic inductances every time a power MOSFET is turned on or off in an SMPS

Infineon Technologies AG has developed an ultra-small gate driver IC that prevents false triggering due to parasitic inductances that produce ground shifts each time a power MOSFET is turned on or off in a switched-mode power supply (SMPS). The EiceDRIVER 1EDN with TDI (truly differential inputs), one-channel gate-driver family is designed for high-power-density and high-efficiency designs.

The new 1EDN7550U device is housed in an ultra-small (1.5  × 1.1 × 0.39-mm), six-pin leadless TSNP package, which occupies a PCB area that is 5× smaller than family devices in an SOT-23 package.

With a 3.3-V PWM input signal at application level, the EiceDRIVER 1EDN TDI can withstand static ground shifts of up to ±70 V and transient ground shifts of as much as ±150 V peak, said Infineon.

The combination of the small size and ground-shift robustness enables two of these gate-driver ICs to operate in a 48-V half-bridge configuration. “Designers have the freedom to place these gate-driver ICs in the PCB layout wherever they fit best, which is key to enabling industry-leading power density,” said Infineon.

The EiceDRIVER 1EDN7550U, in a leadless TSNP package, enables 25-V and 40-V OptiMOS MOSFETs to operate in switched capacitor topologies at 1.2-MHz switching frequency. In such an application, a high power density of 3,060 W/in.3 and a 97.1% peak efficiency (including auxiliary losses) is possible, according to Infineon.

The EiceDRIVER 1EDN TDI family is available in a standard SOT-23 six-pin package and the new six-pin TSNP package.

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