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FMUSER Original New BLF578 RF Power Transistor Power MOSFET Transistor

FMUSER Original New BLF578 RF Power Transistor Power MOSFET Transistor Features Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (10 MHz to 500 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances Specification Frequency range: 10~500mhz Nom output power: 1000W Power gain(VDS = 50 V; PL = 1000 W): 26 dB Drain efficiency(VDS = 50 V; f = 108 MHz; IDq = 40 mA; PL = 1000 W):  75% Pinning Information

Detail

Price(USD) Qty(PCS) Shipping(USD) Total(USD) Shipping Method Payment
245 1 35 280 DHL

 



FMUSER Original New BLF578 RF Power Transistor Power MOSFET Transistor



Features


Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (10 MHz to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances




Specification

Frequency range: 10~500mhz

Nom output power: 1000W

Power gain(VDS = 50 V; PL = 1000 W): 26 dB

Drain efficiency(VDS = 50 V; f = 108 MHz; IDq = 40 mA; PL = 1000 W):  75%



Pinning Information




 

 

Price(USD) Qty(PCS) Shipping(USD) Total(USD) Shipping Method Payment
245 1 35 280 DHL

 

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