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FMUSER Original New MRF171A RF Power Transistor Power MOSFET

FMUSER Original New MRF171A  RF Power Transistor Power MOSFET  Transistor  Description Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. Features ●N–Channel Enhancement Mode MOSFET ●Excellent Thermal Stability Suited for Cass A Operation ●Guaranteed performance at 150 MHz, 28 Vdc: Output power = 45 W,  ●Power gain = 17 dB (min)' Efficiency = 60% (min) ●Typical Data for Power Amplifiers Applications in Industrial,  ●Commercial and Amateur Radio Equipment: ●Typical performance at 30 MHz, 28 Vdc: Output Power = 30 W, Power  ●gain = 20 dB (Typ.) (PEP), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (

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FMUSER Original New MRF171A  RF Power Transistor Power MOSFET  Transistor 





Description

Designed primarily for wideband large–signal output and driver stages from 30–200 MHz.


Features

N–Channel Enhancement Mode MOSFET
Excellent Thermal Stability Suited for Cass A Operation
Guaranteed performance at 150 MHz, 28 Vdc: Output power = 45 W, 
Power gain = 17 dB (min)' Efficiency = 60% (min)
Typical Data for Power Amplifiers Applications in Industrial, 

Commercial and Amateur Radio Equipment:

Typical performance at 30 MHz, 28 Vdc: Output Power = 30 W, Power 

gain = 20 dB (Typ.) (PEP), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (Typ.)
Gold Top Metal
Low Crss – 8 pF @ VDS = 28 V
100%Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Facilitates Manual Gain Controll, ALC and Modulation Techniques

Applications

 Aerospace and Defense
 ISM
Package include

1x MRF171A  RF Power Transistor



 

 

Price(USD) Qty(PCS) Shipping(USD) Total(USD) Shipping Method Payment
56 1 0 56 airmail

 

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