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FMUSER 1pcs Original New MRF141G RF Power MOSFET Transistor​

FMUSER 1pcs Original New MRF141G  RF Power MOSFET Transistor Description Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers. Features ●Guaranteed performance at 175MHz, 28V: ●Output power: 300W ●Gain: 12dB (14dB Typ.) ●Efficiency: 50% ●Low thermal resistance: 0.35°C/W ●Ruggedness tested at rated output power ●Nitride passivated die for enhanced reliability specification ●Transistor Polarity: N-Channel ●Technology: Si ●Id - Continuous Drain Current: 32 A

Detail

Price(USD) Qty(PCS) Shipping(USD) Total(USD) Shipping Method Payment
168 1 0 168 DHL

 



FMUSER 1pcs Original New MRF141G  RF Power MOSFET Transistor

Description

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers.





Features

Guaranteed performance at 175MHz, 28V:
Output power: 300W
Gain: 12dB (14dB Typ.)
Efficiency: 50%
Low thermal resistance: 0.35°C/W
Ruggedness tested at rated output power
Nitride passivated die for enhanced reliability
specification
Transistor Polarity: N-Channel
Technology: Si
Id - Continuous Drain Current: 32 A
Vds - Drain-Source Breakdown Voltage: 65 V
Operating Frequency: 175 MHz
Gain: 12 dB
Output Power: 300 W
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: 375-04
Pd - Power Dissipation: 500 W
Vgs - Gate-Source Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 3 V





Applications

 Aerospace and Defense

 ISM


package include

1x MRF141G  RF Power Transistor



 

 

Price(USD) Qty(PCS) Shipping(USD) Total(USD) Shipping Method Payment
168 1 0 168 DHL

 

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