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FMUSER 1pcs Original New MRF6VP3450H Lateral N-Channel Broadband RF Power MOSFET Transistor

FMUSER 1pcs Original New MRF6VP3450H  Lateral N-Channel Broadband RF Power MOSFET Transistor  Description: Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, common--source amplifier applications in 50 volt analog or digital television transmitter equipment.   --Typical DVB--T OFDM Performance:  --VDD = 50 Volts, IDQ = 1400 mA, --Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM --Power Gain:22.5 dB --Drain Efficiency:28% --ACPR @ 4 MHz Offset —— 62 dBc @ 4 kHz Bandwidth   --Typical Broadband Two--Tone Performance:  --VDD = 50 Volts, IDQ = 1400 mA, --Po

Detail

Price(USD) Qty(PCS) Shipping(USD) Total(USD) Shipping Method Payment
215 1 0 215 DHL

 

FMUSER 1pcs Original New MRF6VP3450H  Lateral N-Channel Broadband RF Power MOSFET Transistor 




Description:
Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, common--source amplifier applications in 50 volt analog or digital television transmitter equipment.
 
--Typical DVB--T OFDM Performance: 
--VDD = 50 Volts, IDQ = 1400 mA,
--Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM
--Power Gain:22.5 dB
--Drain Efficiency:28%
--ACPR @ 4 MHz Offset —— 62 dBc @ 4 kHz Bandwidth
 
--Typical Broadband Two--Tone Performance: 
--VDD = 50 Volts, IDQ = 1400 mA,
--Pout = 450 Watts PEP, f = 470-860 MHz
--Power Gain:22 dB
--Drain Efficiency:44%
--IM3:-29 dBc
 
--Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz:450 Watts CW
--90 Watts Avg. (DVB--T OFDM Signal, 10 dB PAR, 7.61 MHz Channel Bandwidth)

 





Features:
--Characterized with Series Equivalent Large--Signal Impedance Parameters  
--Internally Input Matched for Ease of Use  
--Qualified Up to a Maximum of 50 VDD Operation  
--Integrated ESD Protection  
--Designed for Push--Pull Operation  

--Greater Negative Gate--Source Voltage Range for Improved Class C Operation 

--RoHS Compliant  
--In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. 
--R5 Suffix = 50 Units per 56 mm, 13 inch Reel.

Package includes:

1 * MRF6VP3450H Transistor



 

 

Price(USD) Qty(PCS) Shipping(USD) Total(USD) Shipping Method Payment
215 1 0 215 DHL

 

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