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The FMUSER Original SD2941-10 HF/VHF/UHF MOSFETs N-channel MOS field-effect Broadband RF Power Field-Effect Transistor
The FMUSER Original SD2941-10 HF/VHF/UHF MOSFETs N-channel MOS field-effect Broadband RF Power Field-Effect Transistor Description The SD2941-10 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use in 28 V to 50 V dc large signal applications up to 230 MHz. It offers 25% lower RDS(on) than the industry standard, with 20% higher PSAT than ST's SD2931-10 device. The SD2941-10 is housed in the low thermal M174 non-pedestal package, offering 25% lower thermal resistance than the industry standard, thus rendering it the "best-in-class" transistor for ISM applications, where reliability and ruggedness are critical factor. Specifica
Detail
| Price(USD) | Qty(PCS) | Shipping(USD) | Total(USD) | Shipping Method | Payment |
| 79 | 1 | 0 | 79 | Airmail |
Description
The SD2941-10 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use in 28 V to 50 V dc large signal applications up to 230 MHz. It offers 25% lower RDS(on) than the industry standard, with 20% higher PSAT than ST's SD2931-10 device. The SD2941-10 is housed in the low thermal M174 non-pedestal package, offering 25% lower thermal resistance than the industry standard, thus rendering it the "best-in-class" transistor for ISM applications, where reliability and ruggedness are critical factor.
Specifications
● Product Category:RF MOSFET Transistors
● Transistor Polarity:N-Channel
● Id - Continuous Drain Current:20 A
● Vds - Drain-Source Breakdown Voltage:130 V
● Gain:15.8 dB
● Output Power:175 W
● Minimum Operating Temperature:- 65 C
● Maximum Operating Temperature:+ 150 C
● Mounting Style:SMD/SMT
● Package / Case:M174
● Packaging:Bulk
● Configuration:Single
● Height:7.11 mm
● Length:24.89 mm
● Operating Frequency:230 MHz
● Series:SD2941
● Type:RF Power MOSFET
● Width:12.83 mm
● Forward Transconductance - Min:6 S
● Channel Mode:Enhancement
● Pd - Power Dissipation:389 W
● Product Type:RF MOSFET Transistors
● Factory Pack Quantity:25
● Subcategory:MOSFETs
● Vgs - Gate-Source Voltage:20 V
Features
● Gold metallization
● Excellent thermal stability
● Common source configuration
● POUT = 175 W min. with 15 dB gain @ 175
MHz, 50 V
● POUT = 135 W typ. with 14 dB gain @ 123 MHz,
28 V
● Low RDS(on)
● Thermally enhanced packaging for lower
● junction temperatures
● In compliance with the 2002/95/EC1 European
directive
| Price(USD) | Qty(PCS) | Shipping(USD) | Total(USD) | Shipping Method | Payment |
| 79 | 1 | 0 | 79 | Airmail |
