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FMUSER Original New MRFE6VP5600H RF Power Transistor Power MOSFET Transistor For 600w FM Transmitter

FMUSER Original New MRFE6VP5600H RF Power Transistor Power MOSFET Transistor For 600w FM Transmitter Overview: These high ruggedness devices, MRFE6VP5600HR6 and MRFE6VP5600HSR6, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. Features: * Unmatched Input and Output Allowing Wide Frequency Range Utilization. * Device can be used Single-Ended or in a Push-Pull Configuration. * Qualified Up to a Maximum of 50 VDD Operation. * Character

Detail

Price(USD) Qty(PCS) Shipping(USD) Total(USD) Shipping Method Payment
265 1 35 300 DHL

 


FMUSER Original New MRFE6VP5600H RF Power Transistor Power MOSFET Transistor For 600w FM Transmitter

Overview:

These high ruggedness devices, MRFE6VP5600HR6 and MRFE6VP5600HSR6, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.



Features:
* Unmatched Input and Output Allowing Wide Frequency Range Utilization.
Device can be used Single-Ended or in a Push-Pull Configuration.
Qualified Up to a Maximum of 50 VDD Operation.
Characterized from 30 V to 50 V for Extended Power Range.
Suitable for Linear Application with Appropriate Biasing.
Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation.
Characterized with Series Equivalent Large-Signal Impedance Parameters.
RoHS Compliant.
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.



Key Parametrics:


Frequency (Min) (MHz)
1.8
Frequency (Max) (MHz)
600
Supply Voltage (Typ) (V)
50
P1dB (Typ) (dBm)
57.8
P1dB (Typ) (W)
600
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
600.0 @ CW
Test Signal
1-TONE
Power Gain (Typ) (dB) @ f (MHz)
24.6 @ 230
Efficiency (Typ) (%)
75.2
Thermal Resistance (Spec) (℃/W)
0.12
Class
AB
Matching
unmatched
Die Technology
LDMOS


RF Performance Table:
230 MHz Narrowband
Typical Performance: VDD = 50 Volts, IDQ = 100 mA


Signal Type
Pout (W)
f (MHz)
Gps (dB)
ηD (%)
IRL (dB)
Pulse (100 µsec, 20% Duty Cycle)
600 Peak
230
25.0
74.6 -18
CW 600 Avg
230 24.6 75.2 -17



Package Include:

1*MRFE6VP5600H RF Power Transistor

 

 

Price(USD) Qty(PCS) Shipping(USD) Total(USD) Shipping Method Payment
265 1 35 300 DHL

 

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