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FMUSER Original New MRF6VP2600H RF Power Transistor MOSFET Transistor 500MHz 600W Lateral N-Channel Broadband

FMUSER Original New MRF6VP2600H RF Power Transistor MOSFET Transistor 500MHz 600W Lateral N-Channel Broadband Overview The MRF6VP2600H is designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. Features * Typical DVB-T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF.Power Gain: 25 dBDrain Efficiency: 28.5%ACPR @ 4 MHz Offset: –61 dBc @ 4 kHz Bandwidth * Typical Pulsed Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 600 Watts Peak, f = 225 MHz, Pulse Width = 100

Detail

Price(USD) Qty(PCS) Shipping(USD) Total(USD) Shipping Method Payment
245 1 35 280 DHL

 


FMUSER Original New MRF6VP2600H RF Power Transistor MOSFET Transistor 500MHz 600W Lateral N-Channel Broadband

Overview

The MRF6VP2600H is designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.



Features

Typical DVB-T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF.Power Gain: 25 dBDrain Efficiency: 28.5%ACPR @ 4 MHz Offset: –61 dBc @ 4 kHz Bandwidth

Typical Pulsed Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 600 Watts Peak, f = 225 MHz, Pulse Width = 100 µsec, Duty Cycle = 20%Power Gain: 25.3 dBDrain Efficiency: 59%

Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak Power, Pulse Width = 100 µsec, Duty Cycle = 20%

Characterized with Series Equivalent Large–Signal Impedance Parameters

CW Operation Capability with Adequate Cooling

Qualified Up to a Maximum of 50 VDD Operation

Integrated ESD Protection

Designed for Push-Pull Operation

Greater Negative Gate-Source Voltage Range for Improved Class C Operation

RoHS Compliant

In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.



Specification

Frequency (Min) (MHz): 2

Frequency (Max) (MHz): 500

Supply Voltage (Typ) (V): 50

P1dB (Typ) (dBm): 57.8

P1dB (Typ) (W): 600

Output Power (Typ) (W) @ Intermodulation Level at Test Signal: 125.0 @ AVG

Test Signal: OFDM

Power Gain (Typ) (dB) @ f (MHz): 25.0 @ 225

Efficiency (Typ) (%): 28.5

Thermal Resistance (Spec) (℃/W): 0.2

Matching: unmatched

Class: AB

Die Technology: LDMOS




 

 

Price(USD) Qty(PCS) Shipping(USD) Total(USD) Shipping Method Payment
245 1 35 280 DHL

 

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